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IRFF230 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 5.5A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRFF230
समारोह 5.5A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF230?> डेटा पत्रक पीडीएफ

IRFF230 pdf
IRFF230
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF230
200
200
5.5
22
±20
25
0.2
85
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA (Figure 10)
200 - - V
Gate to Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0 - 4.0 V
Zero-Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
-
- 25 µA
- 250 µA
On-State Drain Current (Note 2)
Gate to Source Leakage Forward
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
VGS = ±20V
VGS = 10V, ID = 3.0A (Figures 8, 9)
VDS >ID(ON) x rDS(ON)MAX, ID = 3.0A (Figure 12)
VDD 0.5 x Rated BVDSS, ID 5.5A, RG = 9.1,
VGS = 10V, RL = 28.7For VDSS = 160V,
RL = 21.4For VDSS = 120V (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = 10V, ID = 5.5A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating Temperature
5.5
-
-
2.5
-
-
-
-
-
-
--
- ±100
0.25 0.4
4.5 -
- 30
- 50
- 50
- 40
19 30
10 -
A
nA
S
ns
ns
ns
ns
nC
nC
Gate to Drain “Miller” Charge
Input Capacitance
Qgd
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
- 9.0 -
- 600 -
nC
pF
Output Capacitance
Reverse-Transfer Capacitance
COSS
CRSS
- 250 -
- 80 -
pF
pF
Internal Drain Inductance
Internal Source Inductance
LD Measured from the Drain Modified MOSFET
Lead, 5mm (0.2in) from Symbol Showing the
Header to Center of Die Internal Device
LS Measured from the
Source Lead, 5mm
Inductances
D
(0.2in) from Header to
Source Bonding Pad
LD
G
- 5.0 -
nH
- 15 - nH
LS
S
Junction to Case
Junction to ambient
RθJC
RθJA
- - 5.0 oC/W
- - 175 oC/W
2

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