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IRFF220 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 3.5A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRFF220
समारोह 3.5A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF220?> डेटा पत्रक पीडीएफ

IRFF220 pdf
IRFF220
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF220
200
200
3.5
14
±20
20
0.16
85
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Forward
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
VGS = 0V, ID = 250µA (Figure 10)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
VGS = ±20V
VGS = 10V, ID = 2.0A (Figures 8, 9)
VDS > ID(ON) x rDS(ON)MAX, ID = 2.0A (Figure 12)
VDD = 0.5 x Rated BVDSS, RG = 9.1,
VGS = 10V, ID 3.5A (Figures 17, 18)
RL = 27.4for VDSS = 100V,
RL = 20.3for VDSS = 75V,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
200
2.0
-
-
3.5
-
-
1.5
-
-
-
-
--
- 4.0
- 25
- 250
--
- ±100
0.5 0.800
2.25 -
20 40
30 60
50 100
30 60
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Qg(TOT) VGS = 10V, ID = 3.5A, VDS = 0.8 x Rated BVDSS,
-
11
15
Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge
Qgs
is Essentially Independent of Operating
Temperature
- 5.0
-
Qgd
- 6.0
-
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
- 450
-
COSS
- 150
-
CRSS
- 40
-
LD Measured from the
Modified MOSFET
Drain Lead, 5mm (0.2in) Symbol Showing the
from Header to Center Internal Device
of Die
Inductances
- 5.0
-
LS Measured from the
Source Lead, 5mm
(0.2in) from Header and
Source Bonding Pad
G
D
LD
LS
- 15
-
nC
nC
nC
pF
pF
pF
nH
nH
S
Junction to Case
Junction to Ambient
RθJC
RθJA
Free Air Operation
- - 6.25 oC/W
- - 175 oC/W
2

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