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IRFF120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 6.0A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRFF120
समारोह 6.0A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF120?> डेटा पत्रक पीडीएफ

IRFF120 pdf
IRFF120
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF120
100
100
6.0
24
±20
20
0.16
36
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain (“Miller”) Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
LS
ID = 250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
VGS = ±20V
ID = 3.0A, VGS = 10V (Figures 8, 9)
VDS > ID(ON) x rDS(ON)MAX, ID = 3.0A (Figure 12)
VDD 0.5 x Rated BVDSS, ID = 6.0A, RG = 9.1,
VGS =10V (Figures 17, 18), RL = 8for VDSS = 50V,
RL = 6.3for VDSS = 40V, MOSFET Switching
Times are Essentially Independent of Operating
Temperatures
VGS = 10V, ID = 6.0A, VDS = 0.8 x Rated BVDSS
(Figures 14, 19, 20) Gate Charge is Essentially
Independent of Operating Temperature
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
Measured from the Drain
Lead, 5.0mm (0.2in) from
Header to Center of Die
Measured from the Source
Lead, 5.0mm (0.2in) from
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
MIN
100
2.0
-
-
6.0
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
--V
- 4.0 V
- 25 µA
- 250 µA
--A
- ±100 nA
0.25 0.300
2.9 -
S
20 40
ns
37 70
ns
50 100 ns
35 70
ns
10 15 nC
6.0 -
4.0 -
450 -
20 -
50 -
5.0 -
nC
nC
pF
pF
pF
nH
15 - nH
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
Free Air Operation
S
- - 6.25 oC/W
- - 175 oC/W
2

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