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IRFE220 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) - International Rectifier

भाग संख्या IRFE220
समारोह REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFE220?> डेटा पत्रक पीडीएफ

IRFE220 pdf
IRFE220
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200 — —
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.25 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.80
— — 0.92
VGS = 10V, ID = 1.8A
VGS =10V, ID =2.8A
VGS(th)
Gate Threshold Voltage
2.0 — 4.0 V
VDS = VGS, ID =250µA
gfs Forward Transconductance
1.5 — — S ( )
VDS > 15V, IDS =2.8A
IDSS
Zero Gate Voltage Drain Current
— — 25
— — 250 µA
VDS=160V, VGS=0V
VDS =160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
— — 100 nA
IGSS Gate-to-Source Leakage Reverse — — -100
VGS = 20V
VGS = -20V
Qg Total Gate Charge
— — 14.3
VGS =10V, ID= 2.8A
Qgs Gate-to-Source Charge
— — 3.0 nC
VDS =100V
Qgd
Gate-to-Drain (‘Miller’) Charge
— — 9.0
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
— — 40
50
50
ns
VDD =100V, ID =2.8A,
RG =7.5
tf Fall Time
— — 50
LS + LD
Total Inductance
— 6.1 — nH Measured from the center of
drain pad to center of source
pad
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
— 260
— 100 —
— 30 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
— — 2.8
— — 11
A
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.5 V
— — 400 nS
— — 4.3 µc
Tj = 25°C, IS = 2.8A, VGS = 0V
Tj = 25°C, IF =2.8A, di/dt 100A/µs
VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
Min Typ Max Units
9.1
26"
"°"C/W
Test Conditions
Soldered to a copper clad PC board
For footnotes refer to the last page
2
www.irf.com

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भाग संख्याविवरणविनिर्माण
IRFE220REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)International Rectifier
International Rectifier


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