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IRFDC20 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=0.32A) - International Rectifier

भाग संख्या IRFDC20
समारोह Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=0.32A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFDC20
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units Conditions
600 — — V VGS = 0V, ID = 250µA
— 0.88 — V/°C Reference to 25°C, ID = 1mA
— — 4.4 VGS = 10.0V, ID = 0.19A
2.0 — 4.0
1.4 — —
V VDS = VGS, ID = 250µA
S VDS = 50V, ID = 1.3A
— — 25 µA VDS = 600V, VGS = 0V
— — 250
VDS = 480V, VGS = 0V, TJ = 125°C
— — 100 nA VGS = 20V
— — -100
VGS = -20V
— — 18
ID = 2.0A
— — 3.0 nC VDS = 360V
— — 8.9
— 10 —
VGS = 10V
VDD = 300V
— 23 —
— 30 —
— 25 —
— 4.0 —
ns ID = 2.0A
RG = 18
RD = 150
Between lead,
6mm (0.25in.)
— 6.0 —
nH from package
and center of
die contact
— 350 —
— 48 —
VGS = 0V
pF VDS = 25V
— 8.6 —
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units Conditions
MOSFET symbol
— — 0.32
showing the
A
integral reverse
— — 2.6
p-n junction diode.
— — 1.6
— 290 580
— 0.67 1.3
V TJ = 25°C, IS = 0.32A, VGS = 0V
ns TJ = 25°C, IF = 2.0A
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
VDD = 50V, starting TJ = 25°C, L = 54mH
RG = 25, IAS = 1.3A.
ISD 4.4A, di/dt 90A/µs, VDD V(BR)DSS,
TJ 150°C
Pulse width 300µs; duty cycle 2%.
To Order

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFDC20Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=0.32A)International Rectifier
International Rectifier


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