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IRFD9220 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRFD9220
समारोह P-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFD9220?> डेटा पत्रक पीडीएफ

IRFD9220 pdf
IRFD9220
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFD9220
-200
-200
-0.6
-4.8
±20
1.0
0.008
290
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
LS
ID = -250µA, VGS = 0V, (Figure 9)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
VGS = ±20V
ID = -0.3A, VGS = -10V, (Figures 7, 8)
VDS < 50V, ID = -0.3A, (Figure 11)
VDD = 0.5 x Rated BVDSS, ID 0.6A, RG = 9.1
VGS = -10V, (Figures 16, 17)
RL = 165for VDD = 100V
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature.
VGS = -10V, ID = -0.6A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA, (Figures 13, 18, 19)
Gate Charge is Essentially Independent of Operating
Temperature
VDS = -25V, VGS = 0V, f = 1MHz, (Figure 10)
Measured From the Drain
Lead, 2.0mm (0.08in) From
Header to Center of Die
Measured From the Source
Lead, 0.2mm (0.08in) From
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
D
LD
-200
-2.0
-
-
-0.6
-
-
0.6
-
-
-
-
-
-
-
-
-
-
-
-
--
- -4.0
- -25
- -250
--
- ±500
1.000 1.500
1.0 -
15 40
25 50
80 120
50 75
16 22
10 -
4-
350 -
100 -
30 -
4.0 -
6.0 -
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
G
LS
Thermal Resistance Junction to Ambient
RθJA Typical Socket Mount
S
- - 120 oC/W
4-52

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