DataSheet.in

IRFD9120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.0A/ 100V/ 0.6 Ohm/ P-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRFD9120
समारोह 1.0A/ 100V/ 0.6 Ohm/ P-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFD9120?> डेटा पत्रक पीडीएफ

IRFD9120 pdf
IRFD9120
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFD9120
-100
-100
-1.0
-8.0
±20
1.0
0.008
370
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS ID = -250µA, VGS = 0V, (Figure 9)
-100 -
-
VGS(TH) VGS = VDS, ID = -250µA
-2 - -4
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
-
- -25
- -250
ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V
-1.0 -
-
IGSS VGS = ±20V
- - ±500
rDS(ON) ID = -0.8A, VGS = -10V, (Figures 7, 8)
- 0.5 0.6
gfs VDS < 50V, ID = -0.8A (Figure 11)
0.8 1.2
-
td(ON) VDD = 0.5 x Rated BVDSS, ID = -1.0A,
- 25 50
tr
RG = 9.1, VGS = -10V, (Figures 16, 17)
RL = 50for VDD = -50V
- 50 100
td(OFF) MOSFET Switching Times are Essentially Indepen- - 50 100
tf dent of Operating Temperature
- 50 100
Qg(TOT)
Qgs
Qgd
VGS = -10V, ID = -1.0A, VDS = 0.8 x Rated BVDSS
(Figures 13, 18, 19)
Gate Charge is Essentially Independent of Operating
Temperature
-
-
-
16 20
9-
7-
CISS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 10)
- 300 -
COSS
- 200 -
CRSS
- 50 -
LD Measured From the Drain Modified MOSFET
- 4.0 -
Lead, 2.0mm (0.08in) From Symbol Showing the In-
Header to Center of Die ternal Devices
LS
Measured From the Source Inductances
Lead, 2.0mm (0.08in) From
D
- 6.0 -
Header to Source Bonding
Pad
LD
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
G
LS
Thermal Resistance Junction to Ambient
RθJA Typical Socket Mount
S
- - 120 oC/W
4-46

विन्यास 6 पेज
डाउनलोड[ IRFD9120 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFD9120P-Channel Enhancement-Mode lransistorsTEMIC
TEMIC
IRFD91201.0A/ 100V/ 0.6 Ohm/ P-Channel Power MOSFETIntersil Corporation
Intersil Corporation


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English