DataSheet.in

IRF6156 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FlipFET Power MOSFET - International Rectifier

भाग संख्या IRF6156
समारोह FlipFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF6156?> डेटा पत्रक पीडीएफ

IRF6156 pdf
IRF6156
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)SSS
Source-to-Source Breakdown Voltage 20 ––– ––– V VGS=0V, IS=250µA,See Fig. 23a&b
V(BR)SSS/TJ Breakdown Voltage Temp. Coefficient –––
RSS(on)
Static Source-to-Source On-Resistance –––
–––
VGS(th)
Gate Threshold Voltage
0.45
16
27
43
–––
––– mV/°C Reference to 25°C,IS=1mA,Fig.23a&b
d40 mVGS1,2 = 4.5V, IS = 6.5A Fig.11a&b
d60 VGS1,2 = 2.5V, IS = 5.2A
d1.2 V VSS = VGS, IS = 250µA Fig. 10a&b
gfs Forward Transconductance
18 ––– ––– S VSS = 10V, IS = 6.5A, See Fig. 4
––– ––– 1.0 µA VSS = 20V, VGS = 0V,See Fig.23a&b
ISSS
Zero Gate Voltage Source Current
––– ––– 25
VSS = 16V, VGS = 0V, TJ = 125°C
––– 50 ––– nA VSS = 4.5V, VGS = 0V, TJ = 25°C
––– 100 –––
VSS = 4.5V, VGS = 0V, TJ = 60°C
IGSS
Gate-to-Source Forward Leakage
––– 8.0 20 µA VGS = 12V, See Fig. 22
Gate-to-Source Reverse Leakage
––– -8.0 -20
VGS = -12V
Gate-to-Source Forward Leakage
––– 0.20 0.5 µA VGS = 4.5V
Gate-to-Source Reverse Leakage
––– -0.20 -0.5
VGS = -4.5V
Qg Total Gate Charge
––– 12 18
IS = 6.5A
Qgs Gate-to-Source Charge
––– 1.6 2.4 nC VSS = 16V
QG1-S2
Miller Charge
––– 4.4 6.6
VGS = 5.0V, See Fig. 14a,b&c
td(on)
Turn-On Delay Time
––– 8.0 –––
VSS = 10V
tr Rise Time
––– 13 ––– ns IS = 1.0A
td(off)
Turn-Off Delay Time
––– 33 –––
RG = 3.0
tf Fall Time
––– 26 –––
VGS = 5.0V, See Fig. 21a,b&c
Ciss Input Capacitance
––– 950 –––
VGS = 0V
Coss Output Capacitance
––– 210 ––– pF VSS = 15V
Crss
Reverse Transfer Capacitance
––– 150 –––
ƒ = 1.0KHz, See Fig. 13a,b,c,d,e&f
Vssf
Source-to-Source Diode Forward
––– ––– 1.2 V See Fig. 17a&b
Voltage, One Device On
Iss = 2.5A
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%. Gate voltage applied to both gates.
ƒ When mounted on 1 inch square 2oz copper on FR-4.
„ Figures 1, 2 and 3: One Fet is biased with VGS = 9.0V and curves show response of the second FET.
See Fig.4.
… Figures 5, 6 and 7: G1 and G2 are shorted. See Fig.9a&b.
† The diode connected between the gate and source serves only as protection against ESD.
No gate over voltage rating is implied.
2 www.irf.com

विन्यास 13 पेज
डाउनलोड[ IRF6156 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF6156FlipFET Power MOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English