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IRF614 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRF614
समारोह 2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF614?> डेटा पत्रक पीडीएफ

IRF614 pdf
IRF614
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF614
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250
250
2.0
1.3
8.0
±20
20
0.16
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . Tpkg
61
-55 to 150
300
260
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
BVDSS VGS = 0V, ID = 250µA, (Figure 10)
VGS(TH) VGS = VDS, ID = 250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V
TJ = 125oC
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V,
(Figure 7)
250 -
-
V
2.0 - 4.0
V
- - 25 µA
- - 250 µA
2.0 -
-
A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
IGSS
rDS(ON)
gfs
VGS = ±20V
VGS = 10V, ID = 2.5A, (Figures 8, 9)
VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A,
(Figure 12)
- - ±100 nA
- 1.6 2.0
A
0.8 1.2 -
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
VDD = 0.5 x Raterd BVDSS, ID 2.0A, RL = 61
VGS = 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
VGS = 10V, ID = 2.0A, VDS = 0.8 x Rated BVDSS
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Temperature
VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)
-
-
-
-
-
-
-
-
-
-
8.9 13
12 18
18 27
8.9 15
9.6 14.4
2.4 3.6
4.5 6.7
180 -
53 -
14 -
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
2

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