DataSheet.in

IRF610B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 200V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या IRF610B
समारोह 200V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF610B?> डेटा पत्रक पीडीएफ

IRF610B pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
200
--
--
--
--
--
--
0.2
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
VGS = 10 V, ID = 1.65 A
-- 1.16
VDS = 40 V, ID = 1.65 A (Note 4) --
2.4
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 175
-- 30
-- 6.8
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 3.3 A,
RG = 25
(Note 4, 5)
VDS = 160 V, ID = 3.3 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
5.2
35
20
25
7.2
1.3
3.5
--
--
10
100
100
-100
4.0
1.5
--
225
40
9.0
20
80
50
60
9.3
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 3.3
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 10
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.3 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 3.3 A,
-- 106
dIF / dt = 100 A/µs
(Note 4) -- 0.37
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.5mH, IAS = 3.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 3.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002

विन्यास 10 पेज
डाउनलोड[ IRF610B Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF610N-Channel Mosfet TransistorInchange Semiconductor
Inchange Semiconductor
IRF6103.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFETIntersil Corporation
Intersil Corporation


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English