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IRF5Y6215CM डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET P-CHANNEL(Vdss=-150V/ Rds(on)=0.29ohm/ Id=-11A) - International Rectifier

भाग संख्या IRF5Y6215CM
समारोह POWER MOSFET P-CHANNEL(Vdss=-150V/ Rds(on)=0.29ohm/ Id=-11A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5Y6215CM?> डेटा पत्रक पीडीएफ

IRF5Y6215CM pdf
IRF5Y6215CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage -150
BVDSS/TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
6.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
—— V
0.18 — V/°C
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
— 0.29
VGS = -10V, ID = -6.6A
— -4.0
——
— -25
— -250
— -100
— 100
— 66
— 13
— 40
— 25
— 65
— 75
— 53
6.8 —
1000
230
115
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = -250µA
VDS 15V, IDS = -6.6A
VDS = -150V ,VGS=0V
VDS = -120V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -6.6A
VDS = -120V
VDD = -75V, ID = -6.6A,
VGS = -10V, RG = 6.8
nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = -25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — -11 A
ISM Pulse Source Current (Body Diode)
— — -44
VSD Diode Forward Voltage
— — -1.6 V
Tj = 25°C, IS = -6.6A, VGS = 0V
trr Reverse Recovery Time
— — 240 ns Tj = 25°C, IF = -6.6A, di/dt 100A/µs
QRR Reverse Recovery Charge
— — 1.7 µC
VDD ≤ −50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 1.67 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF5Y6215CMPOWER MOSFET P-CHANNEL(Vdss=-150V/ Rds(on)=0.29ohm/ Id=-11A)International Rectifier
International Rectifier


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