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IRF5Y5305CM डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A*) - International Rectifier

भाग संख्या IRF5Y5305CM
समारोह POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A*)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5Y5305CM?> डेटा पत्रक पीडीएफ

IRF5Y5305CM pdf
IRF5Y5305CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage -55 — — V
VGS = 0V, ID = -250µA
BVDSS/TJ Temperature Coefficient of Breakdown — -0.053 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.065
VGS = 10V, ID = -15A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
-2.0 — -4.0 V
8.0 — — S ( )
VDS = VGS, ID = -250µA
VDS = -25V, IDS = -16A
IDSS
Zero Gate Voltage Drain Current
-25
-250
µA
VDS = -55V ,VGS=0V
VDS = -44V,
VGS = 0V, TJ =125°C
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— — -100
— — 100 nA
VGS = -20V
VGS = 20V
Qg Total Gate Charge
— — 70
VGS =-10V, ID = -16A
Qgs Gate-to-Source Charge
— — 17 nC
VDS = -44V
Qgd Gate-to-Drain (‘Miller’) Charge — — 30
td(on)
Turn-On Delay Time
— — 26
VDD = -28V, ID = -16A,
tr
td(off)
Rise Time
Turn-Off Delay Time
— — 125
— — 56 ns
RG = 7.5
tf Fall Time
— — 74
LS + LD
Total Inductance
— 6.8 — nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 1290 —
— 495 —
— 203 —
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — -18* A
ISM Pulse Source Current (Body Diode)
— — -72
VSD Diode Forward Voltage
— — -1.3 V
trr Reverse Recovery Time
— — 100 ns
QRR Reverse Recovery Charge
— — 250 nC
Tj = 25°C, IS = -15A, VGS = 0V
Tj = 25°C, IF = -16A, di/dt 100A/µs
VDD -30V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 1.67 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF5Y5305CMPOWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A*)International Rectifier
International Rectifier


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