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IRF5Y31N20 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET N-CHANNEL(Vdss=200V/ Rds(on)=0.092ohm/ Id=18A*) - International Rectifier

भाग संख्या IRF5Y31N20
समारोह POWER MOSFET N-CHANNEL(Vdss=200V/ Rds(on)=0.092ohm/ Id=18A*)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF5Y31N20 pdf
IRF5Y31N20
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
200
3.0
14
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
l Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
—— V
0.27 — V/°C
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
— 0.092
VGS = 10V, ID = 14A
— 5.5
——
— 25
— 250
— 100
— -100
— 100
— 32
— 46
— 30
— 148
— 50
— 27
6.8 —
2480
370
73
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = 250µA
VDS =15V, IDS = 14A
VDS = 200V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 18A
VDS = 160V
VDD = 100V, ID = 18A,
VGS = 10V, RG = 2.5
nH Measured from drain lead (6mm /
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 18* A
ISM Pulse Source Current (Body Diode)
— — 72
VSD Diode Forward Voltage
— — 1.3 V
trr Reverse Recovery Time
— — 300 ns
QRR Reverse Recovery Charge
— — 2.3 µC
Tj = 25°C, IS = 18A, VGS = 0V
Tj = 25°C, IF = 18A, di/dt 100A/µs
VDD 25V
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 1.25 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com

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भाग संख्याविवरणविनिर्माण
IRF5Y31N20POWER MOSFET N-CHANNEL(Vdss=200V/ Rds(on)=0.092ohm/ Id=18A*)International Rectifier
International Rectifier


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