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IRF5Y1310CM डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.044ohm/ Id=18A*) - International Rectifier

भाग संख्या IRF5Y1310CM
समारोह POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.044ohm/ Id=18A*)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5Y1310CM?> डेटा पत्रक पीडीएफ

IRF5Y1310CM pdf
IRF5Y1310CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage 100 — — V
VGS = 0V, ID = 250µA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.114 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.044
VGS = 10V, ID = 18A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 — 4.0 V
14 — — S ( )
VDS = VGS, ID = 250µA
VDS = 25V, IDS = 18A
IDSS
Zero Gate Voltage Drain Current
25
250
µA
VDS = 100V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ =125°C
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— — 100
— — -100 nA
VGS = 20V
VGS = -20V
Qg Total Gate Charge
— — 110
VGS =10V, ID = 18A
Qgs Gate-to-Source Charge
— — 15 nC
VDS = 80V
Qgd Gate-to-Drain (‘Miller’) Charge — — 58
td(on)
Turn-On Delay Time
— — 19
VDD = 50V, ID = 18A,
tr
td(off)
Rise Time
Turn-Off Delay Time
— — 85
— — 65 ns
VGS =10V, RG = 3.6
tf Fall Time
— — 54
LS + LD
Total Inductance
— 6.8 — nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 1872 —
— 463 —
— 234 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 18* A
ISM Pulse Source Current (Body Diode)
— — 72
VSD Diode Forward Voltage
— — 1.3 V
trr Reverse Recovery Time
— — 270 ns
QRR Reverse Recovery Charge
— — 1.8 µC
Tj = 25°C, IS = 18A, VGS = 0V
Tj = 25°C, IF = 18A, di/dt 100A/µs
VDD 30V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 1.25 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF5Y1310CMPOWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.044ohm/ Id=18A*)International Rectifier
International Rectifier


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