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IRF5NJ540 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.052ohm/ Id=22A*) - International Rectifier

भाग संख्या IRF5NJ540
समारोह POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.052ohm/ Id=22A*)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5NJ540?> डेटा पत्रक पीडीएफ

IRF5NJ540 pdf
IRF5NJ540
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
2.0
11
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
——
V
0.11 — V/°C
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
— 0.052
VGS = 10V, ID = 16A
— 4.0 V
— — S( )
— 25 µA
— 250
— 100
— -100 nA
— 104
— 20 nC
— 43
VDS = VGS, ID = 250µA
VDS = 50V, IDS = 16A
VDS = 100V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 16A
VDS = 80V
— 24
— 125
— 86 ns
VDD = 50V, ID = 16A,
VGS =10V, RG = 7.5
— 82
4.0 —
nH Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 1487 —
— 353 —
— 182 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode) — — 22*
ISM Pulse Source Current (Body Diode)
— — 88
A
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.3 V
— — 240 nS
— — 1.67 µC
Tj = 25°C, IS = 16A, VGS = 0V
Tj = 25°C, IF = 16A, di/dt 100A/µs
VDD 50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 1.67 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com

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भाग संख्याविवरणविनिर्माण
IRF5NJ540POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.052ohm/ Id=22A*)International Rectifier
International Rectifier


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