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IRF5N4905 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.024ohm/ Id=-55A*) - International Rectifier

भाग संख्या IRF5N4905
समारोह POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.024ohm/ Id=-55A*)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5N4905?> डेटा पत्रक पीडीएफ

IRF5N4905 pdf
IRF5N4905
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage -55 — — V
VGS = 0V, ID = -250µA
BVDSS/TJ Temperature Coefficient of Breakdown — -0.051 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.024
VGS = 10V, ID = -36A
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
-2.0 — -4.0 V
19 — — S ( )
-25
-250
µA
— — -100
— — 100 nA
— — 195
— — 45 nC
— — 75
VDS = VGS, ID = -250µA
VDS -25V, IDS = -36A
VDS = -55V ,VGS=0V
VDS = -44V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-10V, ID = -36A
VDS = -44V
— — 35
— — 165
— — 95 ns
VDD = -28V, ID = -36A,
VGS =-10V, RG = 2.5
— — 130
— 5.9 — nH
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 3633 —
— 1312 —
— 505 —
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — -55* A
ISM Pulse Source Current (Body Diode)
— — -220
VSD Diode Forward Voltage
— — -1.6 V
trr Reverse Recovery Time
— — 120 ns
QRR Reverse Recovery Charge
— — 365 nC
Tj = 25°C, IS = -36A, VGS = 0V
Tj = 25°C, IF = -36A, di/dt 100A/µs
VDD -25V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 1.0 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com

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भाग संख्याविवरणविनिर्माण
IRF5N4905POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.024ohm/ Id=-55A*)International Rectifier
International Rectifier


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