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IRF5M3205 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.015ohm/ Id=35A) - International Rectifier

भाग संख्या IRF5M3205
समारोह POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.015ohm/ Id=35A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF5M3205?> डेटा पत्रक पीडीएफ

IRF5M3205 pdf
IRF5M3205
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
55 — —
V
VGS = 0V, ID = 250µA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.056 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.015
VGS = 10V, ID = 35A
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
2.0 — 4.0 V
34 — — S ( )
25
250
µA
— — 100
— — -100 nA
— — 170
— — 32 nC
— — 74
VDS = VGS, ID = 250µA
VDS =15V, IDS = 35A
VDS = 55V ,VGS=0V
VDS = 44V,
VGS = 0V, TJ =125°C
VGS =-20V
VGS = -20V
VGS =10V, ID = 35A
VDS = 44V
— — 22
— — 80
— — 70 ns
VDD = 28V, ID = 35A,
VGS = 10V, RG = 2.5
— — 55
— 6.8 — nH Measured from drain lead (6mm /
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
l Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 3600 —
— 1200 —
— 445 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 35*
ISM Pulse Source Current (Body Diode)
— — 140
A
VSD Diode Forward Voltage
— — 1.3 V
trr Reverse Recovery Time
— — 130 ns
QRR Reverse Recovery Charge
— — 410 nC
Tj = 25°C, IS = 35A, VGS = 0V
Tj = 25°C, IF = 35A, di/dt 100A/µs
VDD 25V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 1.0 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com

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भाग संख्याविवरणविनिर्माण
IRF5M3205POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.015ohm/ Id=35A)International Rectifier
International Rectifier


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