DataSheet.in

IRF5EA1310 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.036ohm/ Id=23A) - International Rectifier

भाग संख्या IRF5EA1310
समारोह POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.036ohm/ Id=23A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF5EA1310?> डेटा पत्रक पीडीएफ

IRF5EA1310 pdf
IRF5EA1310
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
2.0
14
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
—— V
0.11 — V/°C
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
— 0.036
VGS = 10V, ID = 22A 
— 4.0
——
— 25
— 250
— 100
— -100
— 110
— 15
— 58
— 26
— 176
— 75
— 130
6.1 —
2022
471
254
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = 250µA
VDS = 25V, IDS = 22A 
VDS= 100V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 22A
VDS = 80V
VDD = 50V, ID = 22A
RG = 3.9
nH Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode) — —
ISM Pulse Source Current (Body Diode) Œ
——
23
92
A
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.3 V
— — 270 nS
— — 1.8 µC
Tj = 25°C, IS = 22A, VGS = 0V 
Tj = 25°C, IF = 22A, di/dt 100A/µs
VDD 25V 
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 3.3 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com

विन्यास 7 पेज
डाउनलोड[ IRF5EA1310 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF5EA1310POWER MOSFET N-CHANNEL(Vdss=100V/ Rds(on)=0.036ohm/ Id=23A)International Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English