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IRF5852 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=20V) - International Rectifier

भाग संख्या IRF5852
समारोह Power MOSFET(Vdss=20V)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5852?> डेटा पत्रक पीडीएफ

IRF5852 pdf
IRF5852
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
20 ––– ––– V
––– 0.016 ––– V/°C
––– ––– 0.090
––– ––– 0.120
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 2.7A ‚
VGS = 2.5V, ID = 2.2A ‚
0.60 ––– 1.25 V VDS = VGS, ID = 250µA
5.2 ––– ––– S VDS = 10V, ID = 2.7A
––– ––– 1.0
––– ––– 25
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
––– ––– 100 nA VGS = 12V
––– ––– -100
VGS = -12V
––– 4.0 6.0
ID = 2.7A
––– 0.95 ––– nC VDS = 16V
––– 0.88 –––
VGS = 4.5V ‚
––– 6.6 –––
VDD = 10V ‚
––– 1.2 ––– ns ID = 1.0A
––– 15 –––
RG = 6.2
––– 2.4 –––
VGS = 4.5V
––– 400 –––
––– 48 –––
VGS = 0V
pF VDS = 15V
––– 32 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 0.96
showing the
A
––– ––– 11
integral reverse
p-n junction diode.
G
––– –––
––– 25
––– 6.5
1.2
38
9.8
V TJ = 25°C, IS = 0.96A, VGS = 0V
ns TJ = 25°C, IF = 0.96A
nC di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 5sec.
2 www.irf.com

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