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IRF5851 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss = +-20 V) - International Rectifier

भाग संख्या IRF5851
समारोह Power MOSFET(Vdss = +-20 V)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5851?> डेटा पत्रक पीडीएफ

IRF5851 pdf
IRF5851
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 20 — —
P-Ch -20 — —
V
N-Ch
P-Ch
0.016
-0.011
V/°C
N-Ch
P-Ch
0.090
0.120
0.135
0.220
N-Ch 0.60 1.25
P-Ch -0.45 -1.2
V
N-Ch 5.2 — —
P-Ch 3.5 — —
S
N-Ch — — 1.0
P-Ch — — -1.0
N-Ch — — 25 µA
P-Ch — — -25
N-P –– — ±100
N-Ch 4.0 6.0
P-Ch 3.6 5.4
N-Ch 0.95
P-Ch 0.66
nC
N-Ch 0.83
P-Ch 5.7
N-Ch 6.6
P-Ch 8.3
N-Ch 1.2
P-Ch
N-Ch
14
15
ns
P-Ch 31
N-Ch 2.4
P-Ch 28
N-Ch 400
P-Ch 320
N-Ch
P-Ch
48
56
pF
N-Ch 32
P-Ch 40
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.7A ‚
VGS = 2.5V, ID = 2.2A ‚
VGS = -4.5V, ID = -2.2A ‚
VGS = -2.5V, ID = -1.7A ‚
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 2.7A ‚
VDS = -10V, ID = -2.2A ‚
VDS = 16 V, VGS = 0V
VDS = -16V, VGS = 0V
VDS = 16 V, VGS = 0V, TJ = 70°C
VDS = -16V, VGS = 0V, TJ = 70°C
VGS = ± 12V
N-Channel
ID = 2.7A, VDS = 10V, VGS = 4.5V
‚
P-Channel
ID = -2.2A, VDS = -10V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.2,
VGS = 4.5V
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0,
VGS = -4.5V
‚
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 & 26 )
‚ Pulse width 400µs; duty cycle 2%.
Min.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ. Max. Units
0.96
-0.96 A
11
-9.0
1.2 V
-1.2
25 38 ns
23 35
6.5 9.8 nC
7.7 12
Conditions
TJ = 25°C, IS = 0.96A, VGS = 0V ‚
TJ = 25°C, IS = -0.96A, VGS = 0V ‚
N-Channel
TJ = 25°C, IF = 0.96A, di/dt = 100A/µs
P-Channel
‚
TJ = 25°C, IF = -0.96A, di/dt = -100A/µs
ƒ Surface mounted on FR-4 board, t 10sec.
2 www.irf.com

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डाउनलोड[ IRF5851 Datasheet.PDF ]


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