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IRF5805 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=-30V) - International Rectifier

भाग संख्या IRF5805
समारोह Power MOSFET(Vdss=-30V)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF5805?> डेटा पत्रक पीडीएफ

IRF5805 pdf
IRF5805
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-30 ––– ––– V VGS = 0V, ID = -250µA
––– 0.02 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.098
––– ––– 0.165
VGS = -10V, ID = -3.8A ‚
VGS = -4.5V, ID = -3.0A ‚
VGS(th)
Gate Threshold Voltage
-1.0 ––– -2.5 V VDS = VGS, ID = -250µA
gfs Forward Transconductance
3.5 ––– ––– S VDS = -10V, ID = -3.8A
IDSS Drain-to-Source Leakage Current
––– ––– -15
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg Total Gate Charge
––– 11 17
ID = -3.8A
Qgs Gate-to-Source Charge
––– 2.3 ––– nC VDS = -15V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 1.5 –––
––– 11 17
VGS = -10V
VDD = -15V, VGS = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 14 21 ns ID = -1.0A
––– 90 135
RG = 6.0
––– 49 74
RD = 15‚
Ciss Input Capacitance
––– 511 –––
VGS = 0V
Coss
Output Capacitance
––– 79 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance
––– 50 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– -2.0
––– ––– -15
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
G
D
S
––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V ‚
––– 19 29 ns TJ = 25°C, IF = -2.0A
––– 16 24 nC di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board, t 10sec.
2 www.irf.com

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डाउनलोड[ IRF5805 Datasheet.PDF ]


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