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IPD09N03LA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - OptiMOS 2 Power-Transistor - Infineon Technologies AG

भाग संख्या IPD09N03LA
समारोह OptiMOS 2 Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies AG 
लोगो Infineon Technologies AG लोगो 
पूर्व दर्शन
1 Page
		
<?=IPD09N03LA?> डेटा पत्रक पीडीएफ

IPD09N03LA pdf
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area5)
IPD09N03LA
IPU09N03LA
min.
Values
typ.
Unit
max.
- - 2.4 K/W
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=20 µA
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
V DS=25 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=4.5 V, I D=30 A
V GS=4.5 V, I D=30 A,
SMD version
V GS=10 V, I D=30 A
V GS=10 V, I D=30 A,
SMD version
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
25
1.2
-
-
-
-
-
-
-
-
23
- -V
1.6 2
0.1 1 µA
10 100
10 100 nA
12 15 m
11.8 14.8
7.4 8.8
7.2 8.6
1 -
46 - S
2) Current is limited by bondwire; with an R thJC=2.4 K/W the chip is able to carry 67 A.
3) See figure 3
4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.4
page 2
2004-02-04

विन्यास 10 पेज
डाउनलोड[ IPD09N03LA Datasheet.PDF ]


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