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IDT71V632 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 64K x 32 3.3V Synchronous SRAM - Integrated Device Technology

भाग संख्या IDT71V632
समारोह 64K x 32 3.3V Synchronous SRAM
मैन्युफैक्चरर्स Integrated Device Technology 
लोगो Integrated Device Technology लोगो 
पूर्व दर्शन
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<?=IDT71V632?> डेटा पत्रक पीडीएफ

IDT71V632 pdf
IDT71V632, 64K x 32, 3.3V Synchronous SRAM
with Pipelined Outputs and Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Definitions(1)
Symbol
Pin Function
I/O Active Description
A0–A15
Address Inputs
I N/A Synchronous Address inputs. The address register is triggered by a combination
of the rising edge of CLK and ADSC Low or ADSP Low and CE Low.
ADSC
Address Status
(Cache Controller)
I LOW Synchronous Address Status from Cache Controller.ADSC is an active LOW
input that is used to load the address registers with new addresses. ADSC is
NOT GATED by CE.
ADSP
ADV
Address Status
(Processor)
Burst Address Advance
I
I
LOW
Synchronous Address Status from Processor. ADSP is an active LOW input that
is used to load the address registers with new addresses. ADSP is gated by
CE.
LOW Synchronous Address Advance. ADV is an active LOW input that is used to
advance the internal burst counter, controlling burst access after the initial
address is loaded. When this input is HIGH the burst counter is not incremented;
that is, there is no address advance.
BWE Byte Write Enable
I LOW Synchronous byte write enable gates the byte write inputs BW1BW4. If BWE is
LOW at the rising edge of CLK then BWX inputs are passed to the next stage in
the circuit. A byte write can still be blocked if ADSP is LOW at the rising edge of
CLK. If ADSP is HIGH and BWX is LOW at the rising edge of CLK then data will
be written to the SRAM. If BWE is HIGH then the byte write inputs are blocked
and only GW can initiate a write cycle.
BW1BW4
Individual Byte
Write Enables
I LOW Synchronous byte write enables. BW1 controls I/O(7:0), BW2 controls I/O(15:8),
etc. Any active byte write causes all outputs to be disabled. ADSP LOW
disables all byte writes. BW1BW4 must meet specified setup and hold times
with respect to CLK.
CE Chip Enable
I LOW Synchronous chip enable. CE is used with CS0 and CS1 to enable the
IDT71V632. CE also gates ADSP.
CLK Clock
CS0 Chip Select 0
CS1 Chip Select 1
I N/A This is the clock input. All timing references for the device are made with respect
to this input.
I HIGH Synchronous active HIGH chip select. CS0 is used with CE and CS1 to enable
the chip.
I LOW Synchronous active LOW chip select. CS1 is used with CE and CS0 to enable
the chip.
GW
Global Write Enable
I
LOW
Synchronous global write enable. This input will write all four 8-bit data bytes
when LOW on the rising edge of CLK. GW supercedes individual byte write
enables.
I/O0–I/O31 Data Input/Output
I/O N/A Synchronous data input/output (I/O) pins. Both the data input path and data output
path are registered and triggered by the rising edge of CLK.
LBO Linear Burst Order
I LOW Asynchronous burst order selection DC input. When LBO is HIGH the Interleaved
(Intel) burst sequence is selected. When LBO is LOW the Linear (PowerPC) burst
sequence is selected. LBO is a static DC input and must not change state while
the device is operating.
OE Output Enable
I LOW Asynchronous output enable. When OE is LOW the data output drivers are
enabled on the I/O pins if the chip is also selected. When OE is HIGH the I/O
pins are in a high-impedence state.
VDD Power Supply
N/A N/A 3.3V core power supply inputs.
VDDQ
Power Supply
N/A N/A 3.3V I/O power supply inputs.
VSS Ground
N/A N/A Core ground pins.
VSSQ
Ground
N/A N/A I/O ground pins.
NC No Connect
N/A N/A NC pins are not electrically connected to the chip.
ZZ Sleep Mode
I HIGH Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power
down the IDT71V632 to its lowest power consumption level. Data retention is
guaranteed in Sleep Mode.
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.422
3619 tbl 02

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IDT71V63264K x 32 3.3V Synchronous SRAMIntegrated Device Technology
Integrated Device Technology


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