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IXSH35N120B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - IXYS Corporation

भाग संख्या IXSH35N120B
समारोह IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSH35N120B?> डेटा पत्रक पीडीएफ

IXSH35N120B pdf
Symbol
g
fs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
t
fi
Eoff
t
d(on)
tri
E
on
td(off)
tfi
E
off
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
RG = 5
VCE = 0.8 VCES
Note 3
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
RG = 5 Ω, VCE = 0.8 VCES
Note 3
(TO-247)
16 23
S
3600
260
75
pF
pF
pF
120 nC
33 nC
49 nC
36 ns
27 ns
160 300 ns
180 300 ns
5 9 mJ
38 ns
29 ns
2.5 mJ
240 ns
340 ns
9 mJ
0.42 K/W
0.25
K/W
IXSH 35N120B
IXST 35N120B
TO-247 AD Outline (IXSH)
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-268 Outline (IXST)
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t 300 µs, duty cycle 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG.
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025

विन्यास 2 पेज
डाउनलोड[ IXSH35N120B Datasheet.PDF ]


शेयर लिंक


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