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IXSH30N60C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Speed IGBT - IXYS Corporation

भाग संख्या IXSH30N60C
समारोह High Speed IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSH30N60C?> डेटा पत्रक पीडीएफ

IXSH30N60C pdf
Symbol
gfs
Cies
Coes
Cres
Q
g
Qge
Qgc
td(on)
tri
td(off)
t
fi
Eoff
t
d(on)
tri
E
on
td(off)
t
fi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
10
3100
240
30
S
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
100 nC
30 nC
38 nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = 4.7
Note 1
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = 4.7
Note 1
30N60B
30N60C
30N60B
30N60C
30N60B
30N60C
30N60B
30N60C
30N60B
30N60C
30N60B
30N60C
30 ns
30 ns
150 270 ns
90 150 ns
140 270 ns
70 120 ns
1.5 2.5 mJ
0.7 1.2 mJ
35 ns
35 ns
0.5 mJ
270 ns
150 ns
250 ns
140
2.5 mJ
1.2 mJ
(TO-247)
0.62 K/W
0.25
K/W
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG.
IXSH/IXST 30N60B
IXSH/IXST 30N60C
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-268 Outline
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025

विन्यास 4 पेज
डाउनलोड[ IXSH30N60C Datasheet.PDF ]


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