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IXSH25N120A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - IXYS Corporation

भाग संख्या IXSH25N120A
समारोह IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSH25N120A?> डेटा पत्रक पीडीएफ

IXSH25N120A pdf
IXSH 25N120A
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs IC = IC90, VCE = 10 V,
Pulse test, t < 300 µs, duty cycle < 2 %
IC(on)
VGE= 15V, VCE = 10 V
Characteristic Values
Min. Typ. Max.
10 17
S
140 A
C
ies
Coes
Cres
Q
g
Qge
Q
gc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
E(on)
td(off)
tfi
E
off
RthJC
RthCK
V = 25 V, V = 0 V, f = 1 MHz
CE GE
I = I , V = 15 V, V = 0.5 V
C c90 GE
CE CES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100µH
RG = 18 W, VCLAMP = 0.8 VCES
Note 1
Inductive load, TJ = 125°C
IC= IC90, VGE = 15 V, L = 100µH
RG = 18 W
V = 0.8 V
CLAMP
CES
Note 1
2850
210
50
pF
pF
pF
120 nC
30 nC
50 nC
100 ns
200 ns
450 ns
650 ns
9.6 mJ
100 ns
200 ns
1.8 mJ
450 ns
900 ns
17 mJ
0.63 K/W
0.25 K/W
Notes:
1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or Rg values.
2) Device must be heatsunk for high temperature measurements to avoid thermal runaway.
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

विन्यास 2 पेज
डाउनलोड[ IXSH25N120A Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSH25N120AIGBTIXYS Corporation
IXYS Corporation


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