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IXSH24N60AU1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFASTTM IGBT with Diode - IXYS Corporation

भाग संख्या IXSH24N60AU1
समारोह HiPerFASTTM IGBT with Diode
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSH24N60AU1?> डेटा पत्रक पीडीएफ

IXSH24N60AU1 pdf
IXSH 24N60U1
IXSH 24N60AU1
Symbol
g
fs
IC(on)
Cies
Coes
Cres
Qg
Q
ge
Qgc
td(on)
tri
td(off)
tfi
E
off
td(on)
tri
E
on
td(off)
tfi
E
off
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
I = I ; V = 10 V,
9 13
C C90 CE
Pulse test, t £ 300 ms, duty cycle £ 2 %
S
VGE = 15 V, VCE = 10 V
VCE = 25 V, VGE = 0 V, f = 1 MHz
65
1800
200
45
A
pF
pF
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
75 90 nC
20 30 nC
35 50 nC
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, L = 100 mH,
V
CE
=
0.8
V,
CES
R
G
=
R
off
=
10
W
Remarks: Switching times may
increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG
24N60U1
24N60AU1
24N60AU1
100
200
450
500
275
2
ns
ns
ns
ns
ns
mJ
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
24N60U1
24N60AU1
24N60U1
24N60AU1
100
200
1.8
475
600
450
4
3
0.25
ns
ns
mJ
ns
ns
ns
mJ
mJ
0.83 K/W
K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V I = I , V = 0 V,
F F C90 GE
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.6 V
IRM IF = IC90, VGE = 0 V, -diF/dt = 240 A/ms
10 15 A
trr VR = 360 V
TJ = 125°C 150
ns
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C 35
50 ns
RthJC
1 K/W
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSH24N60AU1HiPerFASTTM IGBT with DiodeIXYS Corporation
IXYS Corporation


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