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IXGT32N60BD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBTwith Diode - IXYS Corporation

भाग संख्या IXGT32N60BD1
समारोह HiPerFAST IGBTwith Diode
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGT32N60BD1?> डेटा पत्रक पीडीएफ

IXGT32N60BD1 pdf
IXGH 32N60BD1
IXGT 32N60BD1
Symbol
g
fs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
E
off
td(on)
tri
Eon
t
d(off)
tfi
E
off
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
TO-247
25 S
2700
240
50
pF
pF
pF
110 nC
22 nC
40 nC
25 ns
20 ns
100 200 ns
80 150 ns
0.6 1.2 mJ
25 ns
25 ns
1 mJ
120 ns
120 ns
1.2 mJ
0.62 K/W
0.25
K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
t
rr
RthJC
IF = IC90, VGE = 0 V,
TJ = 150°C
Pulse test, t 300 µs, duty cycle d 2 % TJ = 25°C
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs
VR = 360 V
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
TJ = 125°C
TJ = 25°C
6
100
25
1.6 V
2.5 V
A
ns
ns
1.0 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025

विन्यास 2 पेज
डाउनलोड[ IXGT32N60BD1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGT32N60BD1HiPerFAST IGBTwith DiodeIXYS Corporation
IXYS Corporation


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