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IXGT30N60BD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFASTTM IGBT with Diode - IXYS Corporation

भाग संख्या IXGT30N60BD1
समारोह HiPerFASTTM IGBT with Diode
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGT30N60BD1?> डेटा पत्रक पीडीएफ

IXGT30N60BD1 pdf
IXGH 30N60BD1
IXGT 30N60BD1
Symbol
gfs
C
ies
Coes
Cres
Q
g
Qge
Q
gc
td(on)
tri
td(off)
tfi
Eoff
td(on)
t
ri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
25 S
2700
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
240 pF
50 pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
110 nC
22 nC
40 nC
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 150°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
25 ns
30 ns
130 220 ns
100 190 ns
1.0 2.0 mJ
25 ns
35 ns
1.0 mJ
200 ns
230 ns
2.5 mJ
(TO-247 AD)
0.62 K/W
0.25 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VF
IF = IC90, VGE = 0 V, Pulse test
TJ = 150°C
t £ 300 ms, duty cycle d £ 2 %
1.6 V
2.5 V
IRM
trr
R
thJC
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
TJ =100°C
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
6
100
25
A
ns
ns
0.9 K/W
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGT30N60BD1HiPerFASTTM IGBT with DiodeIXYS Corporation
IXYS Corporation


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