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IXGT28N60BD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Low VCE(sat) IGBT with Diode - IXYS Corporation

भाग संख्या IXGT28N60BD1
समारोह Low VCE(sat) IGBT with Diode
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGT28N60BD1?> डेटा पत्रक पीडीएफ

IXGT28N60BD1 pdf
IXGH 28N60BD1
IXGT 28N60BD1
Symbol
gfs
Cies
C
oes
Cres
Qg
Q
ge
Qgc
t
d(on)
tri
t
d(off)
tfi
E
off
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
9 14
S
V = 25 V, V = 0 V, f = 1 MHz
CE GE
1500
170
40
pF
pF
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
80 100 nC
15 30 nC
30 40 nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for V (Clamp) > 0.8 • V , higher T or
CE
CES
J
increased RG
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for V (Clamp) > 0.8 • V , higher T or
CE
CES
J
increased RG
15 ns
25 ns
200 400 ns
200 400 ns
3 6 mJ
15 ns
25 ns
1 mJ
400 ns
400 ns
6 mJ
TO-247
0.83 K/W
0.25 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
t
rr
RthJC
IF = IC90, VGE = 0 V,
TJ = 150°C
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
V = 100 V
R
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
6
T
J
= 100°C
100
TJ = 25°C 25
1.6 V
2.5 V
A
ns
ns
1 K/W
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

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भाग संख्याविवरणविनिर्माण
IXGT28N60BD1Low VCE(sat) IGBT with DiodeIXYS Corporation
IXYS Corporation


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