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IXFX44N50Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPer FET Power MOSFETs Q-CLASS - ETC

भाग संख्या IXFX44N50Q
समारोह HiPer FET Power MOSFETs Q-CLASS
मैन्युफैक्चरर्स ETC 
लोगो ETC लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX44N50Q?> डेटा पत्रक पीडीएफ

IXFX44N50Q pdf
IXFK/IXFX 48N50Q
IXFK/IXFX 44N50Q
Symbol
g
fs
Ciss
Coss
C
rss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 0.5 • I
Note 1
DS D D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
30 45
6400
930
220
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
33
22
75
10
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
190
40
86
nC
nC
nC
0.26 K/W
0.15 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive;
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1
trr
QRM IF = IS,-di/dt = 100 A/ms, VR = 100 V
IRM
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
48 A
192 A
1.5 V
250 ns
1.4 mC
10 A
PLUS247TM (IXFX) Outline
Dim. Millimeter
Min. Max.
A 4.83 5.21
A 2.29 2.54
1
A 1.91 2.16
2
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
TO-264 AA (IXFK) Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

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