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IXFX120N20 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFET Power MOSFETs - IXYS Corporation

भाग संख्या IXFX120N20
समारोह HiPerFET Power MOSFETs
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX120N20?> डेटा पत्रक पीडीएफ

IXFX120N20 pdf
IXFK 120N20
IXFX 120N20
Symbol
g
fs
Ciss
Coss
C
rss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 0.5 • I
Note 1
DS D D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
40 77
9100
2200
1000
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
40
65
110
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
360
50
170
nC
nC
nC
0.22 K/W
0.15 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive;
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1
trr
QRM IF = 50A,-di/dt = 100 A/ms, VR = 100 V
I
RM
120 A
480 A
1.5 V
250 ns
1.1 mC
13 A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
PLUS247TM (IXFX) Outline
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

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डाउनलोड[ IXFX120N20 Datasheet.PDF ]


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