DataSheet.in

4N35 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Optocoupler - Vishay Telefunken

भाग संख्या 4N35
समारोह Optocoupler
मैन्युफैक्चरर्स Vishay Telefunken 
लोगो Vishay Telefunken लोगो 
पूर्व दर्शन
1 Page
		
<?=4N35?> डेटा पत्रक पीडीएफ

4N35 pdf
4N35, 4N36, 4N37
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
Comparative tracking index
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature (2)
DIN IEC 112/VDE 0303, part 1
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
max.10 s dip soldering:
distance to seating plane
1.5 mm
RIO
RIO
Tstg
Tamb
Tj
Tsld
175
1012
1011
- 55 to + 150
- 55 to + 100
100
260
Ω
Ω
°C
°C
°C
°C
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering condditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Junction capacitance
Forward voltage (2)
Reverse current (2)
Capacitance
OUTPUT
VR = 0 V, f = 1 MHz
IF = 10 mA
IF = 10 mA, Tamb = - 55 °C
VR = 6 V
VR = 0 V, f = 1 MHz
Cj 50 pF
VF
1.3 1.5
V
VF 0.9 1.3 1.7 V
IR 0.1 10 μA
CO 25 pF
Collector emitter breakdown
voltage(2)
Emitter collector breakdown
voltage(2)
IC = 1 mA
IE = 100 μA
4N35
4N36
4N37
BVCEO
BVCEO
BVCEO
BVECO
30
30
30
7
V
V
V
V
OUTPUT
Collector base breakdown
voltage (2)
IC = 100 μA, IB = 1 μA
4N35
4N36
4N37
BVCBO
BVCBO
BVCBO
70
70
70
V
V
V
VCE = 10 V, IF = 0
4N35
4N36
ICEO
ICEO
5 50 nA
5 50 nA
Collector emitter leakage current (2)
VCE = 10 V, IF = 0
VCE = 30 V, IF = 0,
Tamb = 100 °C
4N37
4N35
4N36
4N37
ICEO
ICEO
ICEO
ICEO
5 50 nA
500 μA
500 μA
500 μA
Collector emitter capacitance
VCE = 0
CCE 6 pF
COUPLER
Resistance, input output (2)
VIO = 500 V
RIO 1011
Ω
Capacitance, input output
f = 1 MHz
CIO 0.6 pF
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) Indicates JEDEC registered value.
www.vishay.com
154
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 81181
Rev. 1.2, 07-Jan-10

विन्यास 7 पेज
डाउनलोड[ 4N35 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
4N30STANDARD THRU HOLE CASE 730A-04Motorola  Inc
Motorola Inc
4N30PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)Toshiba Semiconductor
Toshiba Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English