DataSheet.in

4N25V डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Optocoupler with Phototransistor Output - Vishay Telefunken

भाग संख्या 4N25V
समारोह Optocoupler with Phototransistor Output
मैन्युफैक्चरर्स Vishay Telefunken 
लोगो Vishay Telefunken लोगो 
पूर्व दर्शन
1 Page
		
<?=4N25V?> डेटा पत्रक पीडीएफ

4N25V pdf
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Features
Approvals:
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D FIMKO (SETI): EN 60950,
Certificate number 12399
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D VDE 0884, Certificate number 94778
VDE 0884 related features:
D Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
D Isolation test voltage
(partial discharge test voltage) Vpd = 1.6 kV
D Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
D Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
D Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D Thickness through insulation 0.75 mm
General features:
D Isolation materials according to UL94-VO
D Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D Climatic classification 55/100/21 (IEC 68 part 1)
D Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D Low temperature coefficient of CTR
D Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
tp 10 ms
Tamb 25°C
Symbol
VR
IF
IFSM
PV
Tj
Value
5
60
3
100
125
Unit
V
mA
A
mW
°C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Test Conditions
tp/T = 0.5, tp 10 ms
Tamb 25°C
Symbol
VCEO
VCEO
IC
ICM
PV
Tj
Value
32
7
50
100
150
125
Unit
V
V
mA
mA
mW
°C
Coupler
Parameter
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Test Conditions
t = 1 min
Tamb 25°C
2 mm from case, t 10 s
Symbol
VIO
Ptot
Tamb
Tstg
Tsd
Value
3.75
250
–55 to +100
–55 to +125
260
Unit
kV
mW
°C
°C
°C
Rev. A4, 11–Jan–99
87

विन्यास 9 पेज
डाउनलोड[ 4N25V Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
4N256-PIN PHOTOTRANSISTOR OPTOCOUPLERQT-BRIGHTEK
QT-BRIGHTEK
4N256-Pin DIP Optoisolators Transistor OutputMotorola  Inc
Motorola Inc


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English