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D1211UK डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - METAL GATE RF SILICON FET - Seme LAB

भाग संख्या D1211UK
समारोह METAL GATE RF SILICON FET
मैन्युफैक्चरर्स Seme LAB 
लोगो Seme LAB लोगो 
पूर्व दर्शन
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<?=D1211UK?> डेटा पत्रक पीडीएफ

D1211UK pdf
D1211UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 10mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 10W
VDS = 12.5V
f = 500MHz
VDS = 0
VDS = VGS
ID = 1A
IDQ = 0.4A
0.5
0.8
10
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0V VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
60 pF
40 pF
4 pF
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 6°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/95

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डाउनलोड[ D1211UK Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
D1211UKMETAL GATE RF SILICON FETSeme LAB
Seme LAB


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