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D1209 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - METAL GATE RF SILICON FET - Seme LAB

भाग संख्या D1209
समारोह METAL GATE RF SILICON FET
मैन्युफैक्चरर्स Seme LAB 
लोगो Seme LAB लोगो 
पूर्व दर्शन
1 Page
		
<?=D1209?> डेटा पत्रक पीडीएफ

D1209 pdf
D1208UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 100mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS
η
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 2A
TOTAL DEVICE
PO = 40W
VDS = 12.5V
IDQ = 1.6A
f = 400MHz
1
1.6
10
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
VDS = 0V VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
2 mA
1 µA
5.5 V
S
dB
%
120 pF
80 pF
8 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95

विन्यास 2 पेज
डाउनलोड[ D1209 Datasheet.PDF ]


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