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DALC112S1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION - STMicroelectronics

भाग संख्या DALC112S1
समारोह LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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DALC112S1 pdf
DALC112S1
TYPICAL APPLICATION
Vcc
DALC112S1
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C).
Symbol
Parameter
VRRM
Peak reverse voltage per diode
Tstg Storage temperature range
Tj Maximum junction temperature
Value
18
-55 to + 150
150
Unit
V
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25°C).
Symbol
VF
IR
C
Parameter
Forward voltage
Reverse leakage current per diode
Input capacitance between Line and GND
Vcc = 5 V, VRMS = 30 mV, F = 1 MHz
(see figure 1 below)
IF = 50 mA
VR = 15 V
Typ.
Max.
1.3
2
Unit
V
µA
7 pF
Fig 1 : Input capacitance measurement
REF2
I/O
G
VCC
REF1
+VCC connected between REF1 and REF2
Input applied :
Vcc = 5V, VRMS = 30 mV, F = 1 MHz
2/3

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डाउनलोड[ DALC112S1 Datasheet.PDF ]


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