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RClamp3331PQ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Low Capacitance ESD and EOS Protection - Semtech

भाग संख्या RClamp3331PQ
समारोह Low Capacitance ESD and EOS Protection
मैन्युफैक्चरर्स Semtech 
लोगो Semtech लोगो 
पूर्व दर्शन
1 Page
		
<?=RClamp3331PQ?> डेटा पत्रक पीडीएफ

RClamp3331PQ pdf
Absolute Maximum Rating
Rating
Peak Pulse Power (tp = 8/20µs)
Peak Pulse Current (tp = 8/20µs)
ESD per IEC 61000-4-2 (Air)(1)
ESD per IEC 61000-4-2 (Contact)(1)
ESD per ISO-10605 (Air)(2)
ESD per ISO-10605 (Contact)(2)
Operating Temperature
Storage Temperature
Symbol
PPK
IPP
VESD
VESD
TJ
TSTG
Value
30
10
±30
±30
±30
±25
-40 to +125
-55 to +150
Electrical Characteristics (T=25OC unless otherwise specified)
Units
W
A
kV
kV
OC
OC
Parameter
Symbol Conditions
Min.
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
VRWM
VBR
IR
Clamping Voltage3
VC
ESD Clamping Voltage4
ESD Clamping Voltage4
Dynamic Resistance4,5
Junction Capacitance
VC
VC
RDYN
CJ
T = -40 OC to +125 OC, Pin 1 to 2 or 2 to 1
It = 1mA, Pin 1 to 2 or 2 to 1
VRWM = 3.3V, Pin 1 to 2 or 2 to 1
PPs
= 10A, tp
(Current)
= 1.2/50 μs (Voltage), 8/20
Combination Waveform
6
ITLP = 4A, tp = 0.2/100ns (TLP)
ITLP = 16A, tp = 0.2/100ns (TLP)
tp = 0.2/100ns
VR = 0V, f = 1MHz
Typ.
7.6
6
3.6
6.6
0.28
0.35
Max.
3.3
11
50
Units
V
V
nA
8V
V
Ω
0.38 pF
Notes:
1) ESD gun return path connected to ESD ground plane
2) ESD gun return path to Horizontal Coupling Plane (HCP); Test conditions: a) 150pF/330pF, 330Ω; b) 150pF/330pF, 2kΩ
3) Measured using a 1.2/50μs voltage, 8/20μs current combination waveform, RS = 2 Ohms. Clamping is defined as the peak voltage across the
device after the device snaps back to a conducting state.
4) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to t2 = 90ns.
5) Dynamic resistance calculated from ITLP = 4A to ITLP = 16A
RClamp3331PQ
Final Datasheet
Revision Date
Rev 2.0
8/28/2017
www.semtech.com
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Semtech
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