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Q1NK80ZR डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOSFET - STMicroelectronics

भाग संख्या Q1NK80ZR
समारोह N-CHANNEL MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=Q1NK80ZR?> डेटा पत्रक पीडीएफ

Q1NK80ZR pdf
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 1 A, di/dt 200 A/µs, VDD 640
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb(#) Thermal Resistance Junction-ambient Max
Rthj-lead Thermal Resistance Junction-lead Max
Tl Maximum Lead Temperature For Soldering
Purpose
(#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
TO-92
0.3
0.19
3
0.025
Value
SOT-223
800
800
± 30
0.25
0.16
5
2.5
0.02
1000
4.5
Unit
DPAK/IPAK
V
V
V
1.0 A
0.63 A
A
45 W
0.36 W /°C
V
V/ns
-55 to 150
°C
TO-92
--
120
40
260
SOT-223
--
50
--
--
DPAK/IPAK
2.78
100
--
300
Unit
°C/W
°C/W
°C/W
°C
Max Value
1
50
Unit
A
mJ
Table 6: GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
BVGSO
Gate-Source Breakdown Igs=± 1mA (Open
Voltage
Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/15

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