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065N03L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Infineon

भाग संख्या 065N03L
समारोह Power MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
1 Page
		
<?=065N03L?> डेटा पत्रक पीडीएफ

065N03L pdf
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
P tot T C=25 °C
T A=25 °C,
R thJA=60 K/W
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSZ065N03LS
Value
26
2.1
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
6 cm2 cooling area4)
-
-
- 4.9 K/W
- 60
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=250 µA
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
30
1.2
-
-
-
0.1
-V
2
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=20 A
-
6.9 8.6 mW
V GS=10 V, I D=20 A
- 5.4 6.5
Gate resistance
RG
0.5 1.0 2.0 W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
34
67
-S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2013-05-10

विन्यास 9 पेज
डाउनलोड[ 065N03L Datasheet.PDF ]


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