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VS-UFH60BA65 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Single Phase Hyperfast Bridge - Vishay

भाग संख्या VS-UFH60BA65
समारोह Insulated Single Phase Hyperfast Bridge
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VS-UFH60BA65?> डेटा पत्रक पीडीएफ

VS-UFH60BA65 pdf
www.vishay.com
VS-UFH60BA65
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum DC output current
at case temperature
Maximum peak, one-cycle
non-repetitive forward current
SYMBOL
IO
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level of threshold voltage, per leg
Low level value of forward slope resistance
High level of threshold voltage, per leg
High level value of forward slope resistance
Maximum forward voltage, per diode
I2t
VF(T0)1
rf1
VF(T0)2
rf2
VFM
TEST CONDITIONS
Resistive or inductive load
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Initial TJ = 25 °C
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
I2t for time tx = I2t x tx0.1 tx 10 ms, VRRM = 0 V
(16.7 % x x IF(AV)) < I < x IF(AV), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
IF = 60 A
VALUES
60
123
360
377
303
317
648
589
458
417
6.4
16.49
0.88
15.87
1.16
2.35
UNITS
A
°C
A
A2s
kA2s
V
m
V
m
V
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Typical reverse recovery time, per diode
trr
Typical reverse recovery current, per diode
Irr
Typical reverse recovery charge, per diode Qrr
Typical junction capacitance
CT
TEST CONDITIONS
VALUES
TJ = 25 °C, IF = 50 A, VR = 200 V,
dIF/dt = 200 A/μs
TJ = 125 °C, IF = 50 A, VR = 200 V,
dIF/dt = 200 A/μs
TJ = 25 °C, IF = 50 A, VR = 200 V,
dIF/dt = 200 A/μs
TJ = 125 °C, IF = 50 A, VR = 200 V,
dIF/dt = 200 A/μs
TJ = 25 °C, IF = 50 A, VR = 200 V,
dIF/dt = 200 A/μs
TJ = 125 °C, IF = 50 A, VR = 200 V,
dIF/dt = 200 A/μs
63
134
4.1
11.4
130
765
VR = 650 V
77
UNITS
ns
A
nC
pF
IFM
trr
t
dIR
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Thermal resistance junction to case
Thermal resistance case to heatsink
Weight
TJ, TStg
RthJC
RthCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-55
-
-
-
-
-
TYP. MAX.
- 175
- 0.91
0.1 -
30 -
- 1.1 (9.7)
- 1.3 (11.5)
SOT-227
UNITS
°C
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
Revision: 25-Apr-2018
2 Document Number: 96135
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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