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P90N20D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या P90N20D
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=P90N20D?> डेटा पत्रक पीडीएफ

P90N20D pdf
IRFP90N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
200
–––
–––
3.0
–––
–––
–––
–––
––– ––– V
0.24 ––– V/°C
––– 0.023
––– 5.0 V
––– 25 µA
––– 250
––– 100
nA
––– -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 56A „
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs Forward Transconductance
39 ––– –––
Qg Total Gate Charge
––– 180 270
Qgs Gate-to-Source Charge
––– 45 67
Qgd Gate-to-Drain ("Miller") Charge
––– 87 130
td(on)
Turn-On Delay Time
––– 23 –––
tr Rise Time
––– 160 –––
td(off)
Turn-Off Delay Time
––– 43 –––
tf Fall Time
––– 79 –––
Ciss Input Capacitance
––– 6040 –––
Coss
Output Capacitance
––– 1070 –––
Crss Reverse Transfer Capacitance
––– 170 –––
Coss
Output Capacitance
––– 8350 –––
Coss
Output Capacitance
––– 420 –––
Coss eff. Effective Output Capacitance
––– 870 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 56A
ID = 56A
VDS = 160V
VGS = 10V, „
VDD = 100V
ID = 56A
RG = 1.2
VGS = 10V
VGS = 0V
„
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
1010
56
58
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 94o
A
MOSFET symbol
showing the
––– ––– 380
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 56A, VGS = 0V „
––– 230 340 ns TJ = 25°C, IF = 56A
––– 1.9 2.8 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com

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डाउनलोड[ P90N20D Datasheet.PDF ]


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