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IGW40N60F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - IPS

भाग संख्या IGW40N60F
समारोह IGBT
मैन्युफैक्चरर्स IPS 
लोगो IPS लोगो 
पूर्व दर्शन
1 Page
		
<?=IGW40N60F?> डेटा पत्रक पीडीएफ

IGW40N60F pdf
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction to case for IGBT
RθJC Thermal Resistance, Junction to case for Diode
RθJA Thermal Resistance, Junction to Ambient
IGW40N60F
Typ. Max.
-- 0.446
-- 1.25
-- 40
Units
/W
/W
/W
Electrical Characteristics of the IGBT (Ta= 25, unless otherwise specified)
Symbol
Parameter
Test Conditions
Rating
Min Typ. Max.
OFF Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage
ICES Collector-Emitter Leakage Current
IGES(F) Gate to Emitter Forward Leakage
IGES(R) Gate to Source Reverse Leakage
ON Characteristics
VGE=0V,ICE=250uA
VGE=0V,VCE=600V
VGE=+20V
VGE =-20V
600
--
--
--
-- --
-- 1.0
-- +250
-- -250
VCE(sat) Collector-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
Pulse width tp≤380µs,δ≤2%
IC=40A ,VGE=15V
IC=1mA ,VCE=VGE
-- 2.2 2.7
3.5 5.0 6.5
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Switching Characteristics
VCE=30V,VGE=0V
f=1MHz
-- 1830 --
-- 169 --
-- 47 --
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
Electrical Characteristics of the Diode
VCE=400V,IC=40A,
Rg=10Ω,VGE=15V,
Inductive Load,
Ta=25℃,
VCE=400V,IC=40A,
VGE=15V,
-- 37 --
-- 46 --
-- 130 --
-- 30 --
-- 2.1 --
-- 0.53 --
-- 2.63 --
-- 94 --
-- 18 --
-- 46 --
VF Diode Forward Voltage
IF=20A
Trr Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
IF=20A
di/dt=200A/uS
Qrr Reverse Recovery Charge
-- 1.8 2.6
-- 80 --
-- 6 --
-- 240 --
Units
V
mA
nA
nA
V
V
pF
ns
mJ
nC
V
ns
A
nC
©2016 InPower Semiconductor Co., Ltd.
Page 2 of 6
IGW40N60F REV. A. Mar. 2016

विन्यास 6 पेज
डाउनलोड[ IGW40N60F Datasheet.PDF ]


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