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DMC2053UVT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMC2053UVT
समारोह COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
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<?=DMC2053UVT?> डेटा पत्रक पीडीएफ

DMC2053UVT pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
DMC2053UVT
Q1 Value
20
±12
4.6
3.7
1.4
22
Q2 Value
-20
±12
-3.2
-2.6
-1.3
-20
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
0.7
173
1.1
108
37
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
20
0.4
Typ
0.7
369
54
32
4.1
3.6
0.4
1.0
2.6
3.0
12.5
3.6
6.0
0.9
Max
1.0
±100
1.0
35
43
56
1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Unit
V
µA
nA
V
mΩ
V
pF
Ω
nC
ns
ns
nC
Test Condition
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID = 4.0A
VGS = 1.8V, ID = 2.0A
VGS = 0V, IS = 1A
VDS = 10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V, ID = 6A
VDS = 10V, VGS = 5V,
RG = 6, ID = 6A
IF = 1A, di/dt = 100A/μs
DMC2053UVT
Document number: DS40560 Rev. 2 - 2
2 of 10
www.diodes.com
July 2018
© Diodes Incorporated

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