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AOT12N60FD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 12A N-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AOT12N60FD
समारोह 12A N-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOT12N60FD?> डेटा पत्रक पीडीएफ

AOT12N60FD pdf
AOT12N60FD/AOB12N60FD/AOTF12N60FD
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=10mA, VGS=0V, TJ=25°C
ID=10mA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=10mA, VGS=0V
IDSS
IGSS
VGS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=6A
VDS=40V, ID=6A
IS=12A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=480V, ID=12A
VGS=10V, VDS=300V, ID=12A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
600
700
V
0.68
V/ oC
10
µA
100
±100 nΑ
2.4 3 4 V
0.51 0.65
12 S
1.3 1.6
V
12 A
48 A
1310
110
9
1.8
1659
166
15.8
3.7
2010
220
23
5.6
pF
pF
pF
32 41 50 nC
8.7 nC
19 nC
34 ns
90 ns
120 ns
82 ns
135 220
0.5 0.8
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: June 2013
www.aosmd.com
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