DataSheet.in

AOT472 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 75V N-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AOT472
समारोह 75V N-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
1 Page
		
<?=AOT472?> डेटा पत्रक पीडीएफ

AOT472 pdf
AOT472/AOTF472
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250μA, VGS=0V
VDS=75V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250μA
VGS=10V, VDS=5V
VGS=10V, ID=30A
gFS Forward Transconductance
VDS=5V, ID=30A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
75
2.5
340
3.3
7.4
13.6
75
0.73
1
5
100
3.9
8.9
16.3
1
140
V
μA
nA
V
A
mΩ
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3000
475
32
1.6
3753
679
54
3.2
4500
885
76
4.8
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
77 96 115 nC
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=30A
14 17 20 nC
Qgd Gate Drain Charge
8 13 18 nC
tD(on)
Turn-On DelayTime
18 ns
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1Ω,
38 ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
57 ns
tf Turn-Off Fall Time
8 ns
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/μs
36 52 68 ns
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/μs
365 521 677 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: March 2009
www.aosmd.com
Page 2 of 7

विन्यास 7 पेज
डाउनलोड[ AOT472 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
AOT470N-Channel MOSFETAlpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOT47275V N-Channel MOSFETAlpha & Omega Semiconductors
Alpha & Omega Semiconductors


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English