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D67FP7 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN POWER TRANSISTORS - GE

भाग संख्या D67FP7
समारोह NPN POWER TRANSISTORS
मैन्युफैक्चरर्स GE 
लोगो GE लोगो 
पूर्व दर्शन
1 Page
		
<?=D67FP7?> डेटा पत्रक पीडीएफ

D67FP7 pdf
=electrical characteristics (Tc 25° C) (unless otherwise specified)
CHARACTERISTIC
I ISYMBOL MIN
TYP
MAX
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = 1.0A, RBE = 10n)
Collector Cutoff Current
(VCE = Rated VCEV, VBE(off) = 1.5V)
Emitter Cutoff Current
(VEB = 5V, Ic = 0)
D67FP5
D67FP6
D67FP7
TJ = 25°C
TJ = 150°C
VCEO(sus)
ICEV
lEBO
400
450
500
-
-
-
-
-
-
-
-
-
-
-
-
1.0
2.5
10
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE5
on characteristics
DC Current Gain
(Ic = 150A, VCE =5V)
(Ic = 100A, VCE = 5V)
(Ic = 40A, VCE = 5V)
Collector-Emitter Saturation Voltage
(IC = 150A, IB = 10A)
(IC = 100A, IB = 8A)
(IC = 40A, IB = 4A)
Base-Emitter Saturation Voltage
(IC = 150A, IB = 10A)
(IC = 100A, IB = 8A)
-hFE
25 150
50 300 -
100 350
-
VCE(sat)
-
-
-
1.9 3.0
1.3 2.0
0.8 1.5
VBE(sat)
-
-
2.75 3.5
2.3 3.0
switching characteristics
Resistive Load
Delay Time
Rise Time
Storage Time
VCE = 250V
Ic = 100A
IB1 = 5A, -IB2 = 10A
Fall Time
tp = 50 J,tsec
td - 0.1 0.5
tr
-
0.45
1.0
ts - 3.2 5.0
tf - 1.0 3.0
e-c diode characteristics
Forward Voltage
@TJ = 25°C
@TJ = 150°C
Reverse Recovery Time
(IF = 100A, di/dt = 100A/J,tsec, VBE(off) = 1.5V)
(IF = 100A)
Vp
Vp
Trr
-
-
-
1.3 2.0
1.3 2.5
0.5 1.0
UNIT
Volts
mA
mA
-
V
V
J,ts
Volts
Volts
J,tsec
1000
SOO
r-600 TJ=I~
400 ~
«z 0,::
u 20C
...z
aw:
a:
~:u:> 100
~
uc 80
,;, 60
:r.~
40
Vee=2V
20
TYPICAL CHARACTERISTICS
=-~
-~ ~~
I" ~~5OC
.---1000
SOO
~600 TJ=1SO"C
400
«z ~C
... ~I!l 200
z
aw:
a:
~~
~\.\". \
:u:> 100
uc 80
w 60
:r~.
TJ=125'C\
40
TJ=150'C
Vee=5V
20
--~
~~ ~5'C
~T =125"C
)J ) I
T~=1~"t V \
10
10
40 60 80 100
Ie. COLLECTOR CURRENT (AMPERES)
200
FIGURE 1. DC CURRENT GAIN (VCE = 2V), TYPICAL
10
10
20
40 60 SO 100
200
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 2. DC CURRENT GAIN (VCE = SV), TYPICAL
560

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