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IXSH20N60A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Speed IGBT - IXYS

भाग संख्या IXSH20N60A
समारोह High Speed IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSH20N60A?> डेटा पत्रक पीडीएफ

IXSH20N60A pdf
IXSH 20N60 IXSM 20N60
IXSH 20N60A IXSM 20N60A
Symbol
gfs
IC(on)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
t
ri
td(off)
tfi
Eoff
td(on)
t
ri
Eon
td(off)
tfi
Eoff
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VGE = 15 V, VCE = 10 V
VCE = 25 V, VGE = 0 V, f = 1 MHz
67
65
1800
160
45
S
A
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = 39
Switching times may
increase for VCE (Clamp)
> 0.8 • VCES, higher TJ or
increased RG
20N60
20N60A
20N60A
Inductive load, TJ =
125°C
IC = IC90, VGE = 15 V,
L = 100 µH
VCE = 0.8 VCES,
RG = 39
Remarks: Switching times
may increase for VCE
(Clamp) > 0.8 • V ,
CES
higher TJ or increased RG
20N60
20N60A
20N60
20N60A
90 120 nC
40 55 nC
65 80 nC
100 ns
200 ns
450 ns
ns
350 ns
2.5 mJ
100 ns
200 ns
1 mJ
1000 ns
1000 ns
600 ns
9 mJ
3 5 mJ
0.83 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-204AE Outline
IXSH 20N60 and IXSH 20N60A characteristic curves are located on the
IXSH 20N60U1 and IXSH 20N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

विन्यास 2 पेज
डाउनलोड[ IXSH20N60A Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSH20N60High Speed IGBTIXYS
IXYS
IXSH20N60AHigh Speed IGBTIXYS
IXYS


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