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IXGX120N60A3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Ultra-Low Vsat PT IGBT - IXYS

भाग संख्या IXGX120N60A3
समारोह Ultra-Low Vsat PT IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGX120N60A3?> डेटा पत्रक पीडीएफ

IXGX120N60A3 pdf
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs IC = 60A, VCE = 10 V, Note 1
Cies
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg(on)
Qge IC = IC110, VGE = 15 V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
VCE = 480V, RG = 1.5Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = 100A, VGE = 15V
VCE = 480V, RG = 1.5Ω
RthJC
RthCK
Characteristic Values
Min. Typ. Max.
65 108
S
14.8 nF
800 pF
140 pF
450 nC
67 nC
130 nC
39 ns
82 ns
2.7 mJ
295 ns
260 ns
6.6 mJ
40 ns
83 ns
3.5 mJ
420 ns
410 ns
10.4 mJ
0.16 °C/W
0.15 °C/W
IXGK120N60A3
IXGX120N60A3
TO-264 (IXGK) Outline
PLUS 247TM (IXGX) Outline
Note: 1. Pulse Test, t 300μs; Duty Cycle, d 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
Dim. Millimeter
Min. Max.
A 4.83 5.21
AA12
2.29 2.54
1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
Inches
Min. Max.
.190
.090
.075
.205
.100
.085
.045
.075
.115
.055
.084
.123
.024
.819
.620
.031
.840
.635
.215 BSC
.780 .800
.150 .170
.220 0.244
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

विन्यास 6 पेज
डाउनलोड[ IXGX120N60A3 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGX120N60A3Ultra-Low Vsat PT IGBTIXYS
IXYS


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