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IRFF433 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FIELD EFFECT POWER TRANSISTOR - GE

भाग संख्या IRFF433
समारोह FIELD EFFECT POWER TRANSISTOR
मैन्युफैक्चरर्स GE 
लोगो GE लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF433?> डेटा पत्रक पीडीएफ

IRFF433 pdf
.'
=electrical characteristics (Tc 25° C) (unless otherwise specified)
I I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 JJA)
IRFF432 BVDSS
IRFF433
500
450
-
-
Zero Gate Voltage Drain C!-,rrent
(VOS = Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
loSS
-
-
-
-
Gate-Source Leakage Current
(VGS = ±20V)
IGSS
-
-
MAX
UNIT
-
-
250
1000
±100
Volts
JJA
nA
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 J.l.A)
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.5A)
Forward Transconductance
(VOS = 10V, 10 = 1.5A)
Tc = 25°C VGS(TH)
2.0
10(ON)
ROS(ON)
gfs
2.25
-
1.35
-
-
-
-
4.0 Volts
-A
2.0 Ohms
- mhos
dynamic characteristics
Input Capacitance
Output Capacitance
VGS =OV
VOS =25V
Reverse Transfer Capacitance
f = 1 MHz
Ciss
Coss
Crss
-
-
-
- 800 pF
- 200 pF
- 60 pF
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VOS = 225V
10'= 1.5A, VGS = 15V
RGEN = SOO, RGS = 12.SO
(RGS (EQUIV.) = 100)
td(on)
tr
td(off)
tf
-
-
-
-
15 -
10 -
40 -
25 -
ns
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc =2SOC, VGS = ov, Is = 2.25A)
IS
ISM
VSO
Reverse Recovery Time
(Is = 2.7SA, dls/dt =100AlJ.l.sec, TC = 125°C)
·Pulse Test: Pulse Width ~ 300 ps, duty cycle ~ 2%
trr
ORR
-
-
-
-
-
- 2.25 A
- 9A
1.0 1.3 Volts
800 -
4.6 -
ns
JJC
20
'0
B
6
iii
iii 2
i1
!5 g:
Ba:
0.4
/~/
."
"" "-""i'
......... ~ i"-..
.......
~ 0.2
~ 0.1
S 0.08
0.06
0.04
r-;-TC" 25'C
J = 150°C MAX.
RthJC ::: 5.0KIW
i-SINGLE PULSE
OPERATION IN THIS AREA
t--0.02 IS LIMITEO BY AOSlon)
, I I "II I
0.0
"- ..............
b.... ~
1'0..
"" .........
~" ~
"-
IAFF432-
IAFj'33_
~o P~
l00"s
II
'1nS,
10ms
II
100ms
rrl
I
4 6 8 10 20 40 60 80 100 200 400 600
VOS. OAAlN·TO.sOUACE VOLTADE (VOLTS)
MAXIMUM SAFE OPERATING AREA
2.4
2.2 -~
I
II II
CONDITIONS:
II
/
-2.0
= =ROS(ON) CONDITIONS: '0 1.5 A. VGS lOV
= =~ VGS(TH) CONDITIONS: '0 250pA. VOS VGS
./
S 1.8
N
~ 1.6
./
. /;rROStON I
::;; ./V
.gj ,.4
- -z
~ 1.2
>CI 1.0
- --..-:ci 0.8
/
~ 0.6
rl
./V
.".- .......
r--r--
-::~ ~
a: 0.4
0.2
o
-40
40 80
TJ• JUNCTION TEMPERATURE I'C)
120
160
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
300

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डाउनलोड[ IRFF433 Datasheet.PDF ]


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